Vapor deposition mask, frame-equipped vapor deposition mask, and method for producing organic semiconductor element

ABSTRACT

A vapor deposition mask includes a metal mask and a resin mask having an opening. An inner wall surface for composing the opening has an inflection point in a thicknesswise cross section of the resin mask. When an intersection of a first surface, not facing the metal mask, of the resin mask and the inner wall surface is set to be a first intersection, an intersection of a second surface, facing the metal mask, of the resin mask and the inner wall surface is set to be a second intersection, and there is set a first inflection point first positioned from the first intersection toward the second intersection, an angle formed by a line connecting the first intersection and the first inflection point and the first surface is larger than an angle formed by a line connecting the first inflection point and the second intersection and the second surface.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.15/150,678, filed May 10, 2016, which in turn is a continuation ofInternational Application No. PCT/JP2014/077049, filed Oct. 9, 2014,which designated the United States, the entireties of which areincorporated herein by reference.

FIELD OF THE INVENTION

The present disclosure relates to a vapor deposition mask, aframe-equipped vapor deposition mask, and a method for producing anorganic semiconductor element.

BACKGROUND OF THE INVENTION

With upsizing of the products using organic EL elements or increase insubstrate sizes, a demand for upsizing is also growing with respect tovapor deposition masks. Further, the metal plates for use in productionof the vapor deposition masks composed of metals are also upsized.However, with the present metal processing technique, it is difficult toform slits in a large metal plate with high precision and these cannotrespond to enhancement in definition of the slits. Further, in the caseof use of a vapor deposition mask composed of only a metal, the weightthereof also increases with upsizing, and the total mass including aframe also increases, which becomes a hindrance to handling.

Under such circumstances, in Patent Literature 1, there is proposed avapor deposition mask including a metal mask in which slits are providedand a resin mask which is positioned on the surface of the metal maskand in which openings corresponding to a pattern to be produced by vapordeposition are arranged for a plurality of rows in the lengthwisedirection and the widthwise direction, the metal mask and the resin maskbeing stacked. The vapor deposition mask proposed in Patent Literature 1is regarded as being capable of satisfying both high definition andlightweight in upsizing and forming a vapor deposition pattern with highdefinition.

Moreover, Patent Document 1 above discloses that a cross-sectional shapeof the opening or a cross-sectional shape of the slit is preferably ashape having broadening toward a vapor deposition source side in orderto prevent generation of a shadow in production by vapor deposition withuse of the vapor deposition mask. Notably, the shadow is a phenomenonthat a part of a vapor deposition material released from the vapordeposition source collides with inner wall surfaces of the slit of themetal mask and/or the opening of the resin mask and does not reach thevapor deposition target, and thereby, a portion without vapor depositionthat has a film thickness smaller than the intended vapor depositionfilm thickness arises. Furthermore, Patent Literature 1 above disclosesthat an angle formed by a straight line connecting a lower bottom distalend in the opening of the resin mask and an upper bottom distal end inthe opening of the resin mask and the surface of the resin mask ispreferably within a range of 5° to 85°, still preferably within a rangeof 15° to 80°, further preferably within a range of 25° to 65°. Studyingthe contents of Patent Document 1 above, it can be considered that thecross-sectional shape of the opening is preferably set to be a shapehaving larger broadening toward the vapor deposition source side inorder to effectively prevent generation of a shadow. In other words, itcan be considered that an angle formed by the straight line connectingthe lower bottom distal end in the opening of the resin mask and theupper bottom distal end in the opening of the resin mask and a surfaceof the resin mask on a side of not being in contact with the metal maskis preferably set to be as small an angle as possible.

Now, even in the case where the cross-sectional shape of the opening isset to be a shape having broadening toward the vapor deposition sourceside, when the resin mask has a large thickness, there can be a casewhere generation of a shadow cannot be sufficiently prevented.Accordingly, it can be considered that in order to sufficiently suppressgeneration of a shadow, a measure to make the thickness of the resinmask small is needed to be taken while the cross-sectional shape of theopening is set to be a shape having larger broadening toward the vapordeposition source side. However, in the case of taking this measure, thestrength of the openings of the resin mask deteriorate, and moreover,the dimensional precision of the openings on the surface of the resinmask not in contact with the metal mask deteriorates. Moreover, as theaforementioned angle formed by the straight line connecting the lowerbottom distal end in the opening of the resin mask and the upper bottomdistal end in the opening of the resin mask and the surface of the resinmask is made smaller, the opening dimension of the opening on thesurface on the side of being in contact with the metal mask becomeslarger. In the case where the opening dimension of the opening on thesurface of the resin mask on the side of being in contact with the metalmask becomes large, the pitch between the neighboring openings becomesnarrow, which can sometimes causes a hindrance in arranging a metalportion for composing a slit of the metal mask between the neighboringopenings in the lengthwise direction or the crosswise direction.

RELATED ART DOCUMENT Patent Document Patent Document 1

Japanese Patent No. 5288072

SUMMARY OF THE INVENTION

Some embodiments of the present invention are devised in view of suchcircumstances, and some objects thereof are to provide a vapordeposition mask and a frame-equipped vapor deposition mask capable ofsatisfying both high definition and light weight in upsizing andsuppressing generation of a shadow while securing the strength ofopenings, and to provide a method for producing an organic semiconductorelement capable of producing an organic semiconductor element excellentin precision.

According to an embodiment of the present invention, there is provided avapor deposition mask including: a metal mask in which a slit isprovided; and a resin mask having a first surface, an opposed secondsurface, and an opening extending in a thickness direction of the resinmask from the first surface to the second surface and corresponding to apattern to be produced by vapor deposition. The metal mask is stacked onthe second surface of the resin mask. An inner wall surface forcomposing the opening of the resin mask has at least one inflectionpoint along the thickness direction. In the thickness direction, anintersection of the first surface and the inner wall surface is a firstintersection, an intersection of the second surface and the inner wallsurface is a second intersection, and the inflection point is positionedbetween the first intersection and the second intersection. An angle(θ1), formed between a straight line connecting the first intersectionand the inflection point and the first surface, is larger than an angle(θ2), formed between an imaginary extension of a straight lineconnecting the inflection point and the second intersection and thesecond surface. At least a portion of the inner wall surface extendsoutwardly from the first surface toward the second surface in thethickness direction.

Moreover, according to an embodiment of the present invention, there isprovided a method for producing an organic semiconductor elementincluding a step of forming a vapor deposition pattern on a vapordeposition target with use of a frame-equipped vapor deposition maskincluding a vapor deposition mask which is fixed to a frame, wherein inthe step of forming the vapor deposition pattern, the vapor depositionmask fixed to the frame includes: a metal mask in which a slit isprovided; and a resin mask having a first surface, an opposed secondsurface, and an opening extending in a thickness direction of the resinmask from the first surface to the second surface and corresponding to apattern to be produced by vapor deposition is provided, the metal maskbeing stacked on the second surface of the resin mask. An inner wallsurface for composing the opening of the resin mask has at least oneinflection point along the thickness direction. In the thicknessdirection, an intersection of the first surface and the inner wallsurface is a first intersection, an intersection of the second surfaceand the inner wall surface is a second intersection, and the inflectionpoint is positioned between the first intersection and the secondintersection. An angle (θ1), formed between a straight line connectingthe first intersection and the inflection point and the first surface,is larger than an angle (θ2), formed between an imaginary extension of astraight line connecting the inflection point and the secondintersection and the second surface. At least a portion of the innerwall surface extends outwardly from the first surface toward the secondsurface in the thickness direction.

Moreover, according to an embodiment of the present invention, there isprovided a frame-equipped vapor deposition mask including a vapordeposition mask which is fixed to a frame, wherein the vapor depositionmask includes: a metal mask in which a slit is provided; and a resinmask having a first surface, an opposed second surface, and an openingextending in a thickness direction of the resin mask from the firstsurface to the second surface and corresponding to a pattern to beproduced by vapor deposition. The metal mask is stacked on the secondsurface of the resin mask. An inner wall surface for composing theopening of the resin mask has at least one inflection point along thethickness direction. In the thickness direction, an intersection of thefirst surface and the inner wall surface is a first intersection, anintersection of the second surface and the inner wall surface is asecond intersection, and the inflection point is positioned between thefirst intersection and the second intersection. An angle (θ1), formedbetween a straight line connecting the first intersection and theinflection point and the first surface, is larger than an angle (θ2),formed between an imaginary extension of a straight line connecting theinflection point and the second intersection and the second surface. Atleast a portion of the inner wall surface extends outwardly from thefirst surface toward the second surface in the thickness direction.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an elevation view of a vapor deposition mask of an embodimentas seen from a metal mask side.

FIG. 2 is a schematic cross-sectional view of A-A portion of the vapordeposition mask shown in FIG. 1 and a diagram for depicting across-sectional shape of an inner wall surface of an opening in thethickness direction of the resin mask.

FIG. 3 is a variant of the view shown in FIG. 2.

FIG. 4 is another variant of the view shown in FIG. 2.

FIG. 5 is yet another variant of the view shown in FIG. 2.

FIG. 6 is an elevation view of a vapor deposition mask of an embodimentas seen from the metal mask side.

FIG. 7 is an example of a cross section of the vapor deposition masktaken along the B-B line shown in FIG. 1.

FIG. 8 is an elevation view of a vapor deposition mask of a firstembodiment as seen from the metal mask side.

FIG. 9 is an elevation view of the vapor deposition mask of the firstembodiment as seen from the metal mask side.

FIG. 10 is an elevation view of the vapor deposition mask of the firstembodiment as seen from the metal mask side.

FIGS. 11A and 11B are elevation views of a vapor deposition mask of thefirst embodiment as seen from the metal mask side.

FIG. 12 is an elevation view of a vapor deposition mask of a secondembodiment as seen from the metal mask side.

FIG. 13 is an elevation view of the vapor deposition mask of the secondembodiment as seen from the metal mask side.

FIGS. 14A to 14C are diagrams for explaining a method for producing avapor deposition mask of an embodiment and ACare cross-sectional views.

FIG. 15 is an elevation view of a frame-equipped vapor deposition maskof an embodiment as seen from the resin mask side.

FIG. 16 is an elevation view of a frame-equipped vapor deposition maskof an embodiment as seen from the resin mask side.

DETAILED DESCRIPTION OF THE INVENTION Vapor Deposition Mask

Hereafter, a vapor deposition mask 100 of an embodiment of the presentinvention is specifically described.

As shown in FIG. 1, the vapor deposition mask 100 of an embodiment ofthe present invention has a configuration in which a metal mask 10 inwhich slits 15 are provided is stacked on one surface of a resin mask 20in which openings 25 corresponding to a pattern to be produced by vapordeposition are provided. The resin mask has a first surface and anopposed second surface. Hereafter, configurations in the vapordeposition mask of an embodiment are described.

Resin Mask

As shown in FIG. 1, in the resin mask 20, a plurality of openings 25 areprovided. FIG. 1 is an elevation view of the vapor deposition mask of anembodiment as seen from the metal mask side. Furthermore, as shown inFIGS. 2 to 5, the resin mask 20 has an inner wall surface for composingthe opening 25 of the resin mask 20 that extends in the thicknessdirection of the resin mask 20 from the first surface to the secondsurface. The inner wall surface has at least one inflection point (S1)in the thickness direction of the resin mask. An intersection of thefirst surface and the inner wall surface is a first intersection (Q1),an intersection of the second surface and the inner wall surface is asecond intersection (Q2), and the inflection point (S1) is positionedbetween the first intersection (Q1) and the second intersection (Q2). Anangle (θ1), formed between a straight line (T1) connecting the firstintersection (Q1) and the inflection point (S1) and the first surface,is larger than an angle (θ2), formed between an imaginary extension of astraight line (T2) connecting the inflection point (S1) and the secondintersection (Q2) and the second surface. At least a portion of theinner wall surface extends outwardly from the first surface toward thesecond surface in the thickness direction. Notably, FIGS. 2 to 5 areschematic cross-sectional views of A-A portion in FIG. 1 and diagramsfor explaining cross-sectional shapes of the inner wall surface of theopening 25. “Inner wall surface for composing an opening” stated in thepresent specification means a surface, of the resin mask, that forms theopening itself, in other words, a surface that faces the space in theopening, in the opening penetrating the resin mask 20 in the thicknessdirection.

According to the vapor deposition mask of an embodiment that has theaforementioned feature, generation of a shadow can be sufficientlysuppressed while securing the strength of openings. Hereafter, anadvantage of an embodiment of the present invention is described,exemplified by a case (hereinafter referred to as comparative example)where the inner wall surface for composing the opening does not have aninflection point in the thickness direction.

In the comparative example, in order to suppress generation of a shadow,an opening dimension of the opening on the surface of the resin mask onthe side in contact with the metal mask is determined by an angle formedby a straight line connecting the first intersection (Q1) and the secondintersection (Q2) shown in each figure and the first surface. In orderto suppress generation of a shadow, the angle formed by the straightline connecting the first intersection (Q1) and the second intersection(Q2) and the first surface needs to be small. Nevertheless, in the caseof making the angle small, for example, in the case of making the anglesmall to approximate (θ2) shown in each figure, the strength of theopenings deteriorates, which causes defects such as vapor depositionpattern failure to arise in production by vapor deposition using thevapor deposition mask. Moreover, this causes deterioration in openingdimension precision of the opening in the resin mask on the side that isnot in contact with the metal mask. Notably, the opening dimension ofthe opening in the resin mask on the side that is not in contact withthe metal mask corresponds to a pattern shape to be produced by vapordeposition using the vapor deposition mask.

Moreover, in the comparative example, in the case where the angle formedby the straight line connecting the first intersection and the secondintersection and the first surface shown in each figure is made smalldown to an angle approximating (θ2) shown in each figure, the openingdimension of the opening on the surface on the side in contact with themetal mask becomes a larger dimension than the opening dimension of theopening in an embodiment of the present invention. In the case where theopenings are regularly arranged in the crosswise direction or thelengthwise direction, when the opening dimension of the opening on thesurface on the side in contact with the metal mask becomes large, thedistance between the neighboring openings becomes narrow. This cansometimes cause a hindrance in arranging a metal portion for composing aslit of the metal mask between the neighboring openings.

Notably, “lengthwise direction” and “crosswise direction” stated in thepresent specification mean the vertical direction and the horizontaldirection in the drawings, respectively, and may be any directions ofthe longitudinal direction and the width direction of the vapordeposition mask, the resin mask and the metal mask. For example, thelongitudinal direction of the vapor deposition mask, the resin mask andthe metal mask may be set to be the “lengthwise direction”, or the widthdirection may be set to be the “lengthwise direction”. Moreover, whilein the present specification, the case where the shape of the vapordeposition mask in plan view is a rectangular shape is exemplarilydescribed, it may be another shape such, for example, as a circularshape and a rhombic shape. In this case, the longitudinal direction ofthe diagonal line, the radial direction, or any direction only has to beset as the “longitudinal direction”, the direction perpendicular to the“longitudinal direction” set as the “width direction (sometimes referredto as short-side direction)”.

On the other hand, in an embodiment of the present invention, the innerwall surface has at least one inflection point in the thicknessdirection, and the relation is satisfied that the angle (θ1) formed bythe straight line (T1) and the first surface>the angle (θ2) formed by animaginary extension of the straight line (T2) and the second surface.Hence, the angle (θ1) can be made larger than the angle formed by thestraight line connecting the first intersection (Q1) and the secondintersection (Q2) and the first surface in the aforementionedcomparative example. Therefore, even in the case where the thickness ofthe resin mask is made thin, the strength of the openings can besufficiently satisfied. Moreover, according to an embodiment of thepresent invention, in the case where the angle formed by the straightline connecting the first intersection (Q1) and the second intersection(Q2) and the first surface in the comparative example is set to be thesame angle as (θ2), the opening dimension of the opening 25 on the resinmask surface on the side in contact with the metal mask becomes smallerthan the opening dimension of the opening in the comparative example. Inthis way, generation of a shadow can be sufficiently suppressed whilesecuring the distance (pitch) between the openings, which does not causea hindrance in arranging a metal portion for composing a slit of themetal mask between the neighboring openings.

The vapor deposition mask of an embodiment does not take it as anessential condition that all of the thickness direction cross sectionsof the inner wall surfaces for composing one opening have theaforementioned feature, but at least one inner wall surface of the innerwall surfaces for composing one opening is sufficient to have theaforementioned feature in the thickness direction. For example, out ofthe inner wall surfaces for composing the opening 25, the thicknessdirection cross sections of the inner wall surfaces opposing in thecrosswise direction or the lengthwise direction may have theaforementioned feature, or all of the thickness direction cross sectionsof the inner wall surfaces for composing one opening 25 may have theaforementioned feature. For example, in the case where a linear sourcevapor deposition source is used in which the crosswise direction of thevapor deposition mask is the scanning direction in formation of thevapor deposition pattern using the vapor deposition mask of anembodiment of the present invention, the thickness direction crosssections of the inner wall surfaces opposing in the lengthwise directionout of the inner wall surfaces for composing the opening preferably havethe aforementioned feature.

Moreover, while in a mode shown in each figure, the opening shape of theopening 25 exhibits a rectangular shape, the opening shape is notspecially limited but the opening shape of the opening 25 may be rhombicor polygonal or may be a shape having a curvature such as a circle andan ellipsoid. Notably, it can be said that the rectangular or polygonalopening shape is a preferable opening shape of the opening 25 in view ofcapability of securing a larger area of light emission as compared withthe opening shape having a curvature such as a circle and an ellipsoid.

Moreover, “thickness direction cross section” of the inner wall surfacestated in the present specification means a cross section takenperpendicularly to the first and second surfaces of the resin mask 20,so as to intersect the inner wall surface of the opening.

As shown in FIGS. 2 to 5, the inner wall surface has at least oneinflection point in the thickness direction cross section. Notably, in amode shown in FIG. 2, the inner wall surface has one inflection point(S1) in the thickness direction. In the modes shown in FIGS. 3 to 5, theinner wall surface has two or more inflection points in the thicknessdirection cross section.

As long as the relation of θ1>θ2 is satisfied, specific angles of θ1 andθ2 are not specially limited and can be properly configured within arange where the relation is satisfied. Notably, in the case where theangle of θ1 is less than about 60°, the strength of the openings 25tends to deteriorate depending on the thickness of the resin mask, andmoreover, the dimensional precision of the openings on the surface onthe side not in contact with the resin mask tends to deteriorate.Accordingly, with this point taken into consideration, the angle (θ1)formed by the straight line connecting the first inflection point (S1)and the first intersection (Q1) and the first surface is preferably notless than about 60°. The upper limit value is not specifically limitedbut is about 90°.

Moreover, even in the case where the aforementioned relation issatisfied, when the angle (θ2) formed between an imaginary extension ofthe straight line (T2) connecting the first inflection point (S1) andthe second intersection (Q2) and the second surface exceeds about 70°,the effect of suppressing generation of a shadow tends to deteriorate.Accordingly, with this point taken into consideration, θ2 is preferablynot more than about 70°. While the lower limit value is not speciallylimited, it is preferably not less than about 30° with the openingdimension of the opening on the surface on the side of being in contactwith the metal mask and the broadening of the vapor deposition materialradiated from the vapor deposition source taken into consideration.

Moreover, as shown in FIGS. 3 to 5, in the case where the thicknessdirection cross section of the inner wall surface has a plurality ofinflection points, there is not any limitation to angles formed bystraight lines connecting inflection points other than the firstinflection point (S1) and the second intersection (Q2) and the secondsurface. For example, in the mode shown in FIG. 3, an angle formedbetween an imaginary extension of a straight line connecting a secondinflection point (S2) and the second intersection (Q2) and the secondsurface is less than about 90°, and in the mode shown in FIG. 4, it isabout 90°. Moreover, while in FIG. 5, an angle formed by a straight lineconnecting the second inflection point (S2) and a third inflection point(S3) and the first surface is smaller than θ1 and a smaller angle thanan angle formed by a straight line connecting a fourth inflection point(S4) and the second intersection and the second surface, the angleformed by the straight line connecting the second inflection point (S2)and the third inflection point (S3) and the first surface may be alarger angle than θ1 and the angle formed by the straight lineconnecting the fourth inflection point (S4) and the second intersectionand the second surface. In other words, there is not any limitation tothe angles other than θ1 and θ2.

While the thickness of the resin mask 20 is not specially limited, inthe case of further improving the effect of suppressing generation of ashadow, the thickness of the resin mask 20 is preferably about 25 μm orless, still preferably less than about 10 μm, particularly preferablyabout 8 μm or less. A preferable range of the lower limit value is notspecially limited, but in the case where the thickness of the resin mask20 is less than about 3 μm, defects such as a pinhole tend to arise anda risk of deformation or the like increases. In particular, by settingthe thickness of the resin mask 20 to be about 3 μm or more and lessthan about 10 μm, still preferably about 4 μm or more and about 8 μm orless, synergetically with the aforementioned cross-sectional shape ofthe inner wall surface composing the opening 25 in the thicknessdirection, the influence of a shadow in formation of a high definitionpattern exceeding about 400 ppi can be more effectively prevented. Whilethe resin mask 20 may be directly bonded to the metal mask 10 mentionedlater, or may be bonded via an adhesive layer, in the case where theresin mask 20 is bonded to the metal mask 10 via the adhesive layer, thetotal thickness of the resin mask 20 and the adhesive layer ispreferably within the aforementioned preferable thickness range.

While the distance (D1 shown in FIG. 2) from the first surface to thefirst inflection point (S1) in the thickness direction (in the verticaldirection) is not specially limited, it is preferably approximatelyabout 20 to 80 where the thickness of the entirety of the resin mask isset to be 100. By setting the distance (D1) to be within this range,generation of a shadow can be more effectively suppressed while thestrength of the openings 25 is sufficiently satisfied. The distance fromthe first inflection point (S1) to the second surface in the thicknessdirection can be properly configured in accordance with theaforementioned distance (D1).

For the resin mask 20, a conventionally known resin material can beproperly selected and used, and while the material is not speciallylimited, a material that enable formation of the opening 25 with highdefinition by laser processing or the like, has a low rate ofdimensional change and a low rate of humidity absorption under heat andwith passage of time, and is light weight, is preferably used. As suchmaterials, a polyimide resin, a polyamide resin, a polyamide-imideresin, a polyester resin, a polyethylene resin, a polyvinylalcoholresin, a polypropylene resin, a polycarbonate resin, a polystyreneresin, a polyacrylonitrile resin, an ethylene-vinyl acetate copolymerresin, an ethylene-vinylalcohol copolymer resin, an ethylene-methacrylicacid copolymer resin, a polyvinyl chloride resin, a polyvinylidenechloride resin, cellophane, an ionomer resin and the like can be cited.Among the materials listed above, the resin materials with the thermalexpansion coefficients of about 16 ppm/° C. or less are preferable, theresin materials with the rates of humidity absorption of about 1.0% orless are preferable, and the resin materials including both conditionsare particularly preferable.

Moreover, a barrier layer can also be provided on the inner wall surfacecomposing the opening 25 of the resin mask 20. As the barrier layer, athin film layer or a vapor deposition layer of an inorganic oxide, aninorganic nitride or metal can be used. As the organic oxide, an oxideof aluminum, silicon, indium, tin or magnesium can be used, and as themetal, aluminum or the like can be used.

Notably, while in the mode described above, the openings 25 areregularly arranged in the lengthwise direction and the crosswisedirection, they are not limited to this mode. For example, as shown inFIG. 6, a mode in which the openings 25 are alternately arranged canalso be employed. By alternately arranging the openings 25, even in thecase where the resin mask 20 undergoes thermal expansion, the openings25 can absorb expansions arising in portions, and large deformation canbe prevented from arising due to accumulation of the expansions.

Metal Mask

As shown in FIG. 7, the metal mask 10 is stacked on one side (the secondsurface) of the resin mask 20. The metal mask 10 is composed of metal,in which the slits 15 extending in the lengthwise direction or thecrosswise direction are arranged. The slit 15 is synonymous with anopening. An arrangement example of the slits is not specially limited.As shown in FIG. 2, the slits extending in the lengthwise direction andthe crosswise direction may be arranged in a plurality of rows in thelengthwise direction and the crosswise direction. The slits extending inthe lengthwise direction may be arranged in a plurality of rows in thecrosswise direction. The slits extending in the crosswise direction maybe arranged in a plurality of rows in the lengthwise direction.Moreover, they may be arranged in only one row in the lengthwisedirection or the crosswise direction. Notably, FIG. 7 is a cross sectionof the vapor deposition mask taken along the B-B line shown in FIG. 1,and each of the thickness direction cross sections of the inner wallsurfaces opposing in the crosswise direction exhibits the shapeexemplarily shown, for example, in FIGS. 2 to 5.

The material of the metal mask 10 is not specially limited but aconventionally known material in the field of the vapor deposition maskcan be properly selected and used, and, for example, a metal materialsuch as stainless steel, an iron-nickel alloy, and an aluminum alloy canbe cited. Above all, an invar material that is an iron-nickel alloy canbe preferably used since an invar material is hardly deformed by heat.

While the thickness of the metal mask 10 is not specially limited, inorder to more effectively prevent generation of a shadow, it ispreferably about 100 μm or less, still preferably about 50 μm or less,particularly preferably about 35 μm or less. Notably, in the case ofbeing thinner than about 5 μm, risks of rupture and deformation tend toincrease and handling tends to become difficult.

Moreover, while in the mode shown in FIG. 1, the opening shape of theslit 15 exhibits a rectangular shape, the opening shape is not speciallylimited and the opening shape of the slit 15 may be any shape such as atrapezoid and a circle.

While the cross-sectional shape of the slit 15 formed in the metal mask10 is not specially limited, it is preferably a shape that extendsoutwardly toward the vapor deposition source as illustrated in FIG. 7.In other words, it is preferably a shape that extends outwardly from thesurface on the side in contact with the resin mask 20 toward the surfaceon the side not in contact with the resin mask 20. More specifically, anangle formed by the inner wall surface of the slit 15 and the surface ofthe metal mask 10 on the side in contact with the resin mask 20 (thelower surface of the metal mask in the shown mode) in the thicknessdirection cross section of the inner wall surface composing the slit 15of the metal mask 10 is preferably within a range of about 5° to 85°,still preferably within a range of about 15° to 80°, further preferablywithin a range of about 25° to 65°. In particular, within this range, itis preferably an angle smaller than a vapor deposition angle of a vapordeposition machine to be used.

A method of stacking the metal mask 10 on the resin mask is notspecially limited but the metal mask 10 may be pasted on the resin mask20 using various adhesives or by using a resin mask that hasself-adhesion. The dimensions of the resin mask 20 and the metal mask 10may be the same or may be different. Notably, with fixing to a framewhich is arbitrarily performed afterward taken into consideration, thedimension of the resin mask 20 is preferably made smaller than that ofthe metal mask 10 to set the outer circumferential portion of the metalmask 10 to be in the state of exposure, which facilitates fixing of themetal mask 10 to the frame.

Hereafter, modes of the vapor deposition mask which enables a vapordeposition pattern with higher definition to be produced are described,exemplified by a first embodiment and a second embodiment. Notably, thevapor deposition mask 100 of an embodiment of the present invention isnot limited to the modes described below but may be in any mode as longas the metal mask 10 in which the slit 15 is formed and the resin mask20 in which the opening 25 corresponding to a pattern to be produced byvapor deposition is formed are stacked on each other, and thecross-sectional shape of the inner wall surface for composing theopening 25 satisfies the conditions described above. For example, theslits 15 formed in the metal mask 10 may be a stripe shape (not-shown).Moreover, the slit 15 of the metal mask 10 may be provided at a positionnot overlapping the entirety of one screen. The one screen is mentionedlater.

Vapor Deposition Mask of First Embodiment

As shown in FIG. 8, the vapor deposition mask 100 of the firstembodiment of the present invention is a vapor deposition mask forsimultaneously forming vapor deposition patterns for a plurality ofscreens, and is characterized in that the metal mask 10 in which theplurality of slits 15 are provided is stacked on one surface of theresin mask 20, the openings 25 required for composing the plurality ofscreens are provided in the resin mask 20, and each slit 15 is providedat a position overlapping the entirety of at least one screen.Furthermore, the vapor deposition mask 100 of the first embodiment ischaracterized in that the inner wall surface for composing the opening25 of the resin mask 20 has at least one inflection point (S1) in thethickness direction cross section. An intersection of the first surfaceof the resin mask 20 and the inner wall surface is the firstintersection (Q1), the intersection of the second surface of the resinmask 20 and the inner wall surface is the second intersection (Q2), andthe inflection point (S1) is positioned between the first intersection(Q1) and the second intersection (Q2). An angle (θ1), formed between thestraight line (T1) connecting the first intersection (Q1) and theinflection point (S1) and the first surface, is larger than the angle(θ2), formed between an imaginary extension of the straight line (T2)connecting the inflection point (S1) and the second intersection (Q2)and the second surface. At least a portion of the inner wall surfaceextends outwardly from the first surface toward the second surface inthe thickness direction.

The vapor deposition mask 100 of the first embodiment is a vapordeposition mask used for simultaneously forming vapor depositionpatterns for a plurality of screens. One vapor deposition mask 100 cansimultaneously form vapor deposition patterns compatible with aplurality of products. “Openings” stated in the vapor deposition mask ofthe first embodiment mean patterns to be produced with use of the vapordeposition masks 100 of the first embodiment. For example, when therelevant vapor deposition mask is used for forming an organic layer inan organic EL display, the shape of the openings 25 is a shape of therelevant organic layer. Moreover, “one screen” is constituted of anaggregate of openings 25 corresponding to one product. When the relevantone product is an organic EL display, an aggregate of organic layersrequired for forming one organic EL display, in other words, anaggregate of openings 25 to be the organic layer is “one screen”.Further, in the vapor deposition mask 100 of the first embodiment, inorder to simultaneously form the vapor deposition patterns for theplurality of screens, the above-mentioned “one screen” is arranged foreach of the plurality of screens in the resin mask 20 at predeterminedintervals. Namely, in the resin mask 20, the openings 25 required forcomposing the plurality of screens are provided.

The vapor deposition mask of the first embodiment includes the metalmask 10 in which the plurality of slits 15 are provided on one surfaceof the resin mask, wherein each of the slits is provided at the positionoverlapping the entirety of at least one screen. In other words, it ischaracterized in that between the openings 25 required for composing onescreen, metal line portions which have the same length as the length ofthe slit 15 in the lengthwise direction and have the same thickness asthat of the metal mask 10 between the openings 25 adjacent in thecrosswise direction, or metal line portions which have the same lengthas the length of the slit 15 in the crosswise direction and have thesame thickness as that of the metal mask 10 between the openings 25adjacent in the lengthwise direction do not exist. Hereafter, the metalline portions which have the same length as the length of the slit 15 inthe lengthwise direction and have the same thickness as that of themetal mask 10 and the metal line portions which have the same length asthe length of the slit 15 in the crosswise direction and have the samethickness as that of the metal mask 10 are sometimes collectivelyreferred to simply as metal line portions.

According to the vapor deposition mask 100 of the first embodiment, evenwhen the dimension of the openings 25 required for composing one screenand the pitch between the openings 25 composing one screen are madesmall, for example, even when the dimension of the openings 25 and thepitch between the openings 25 are made extremely fine in order to form ascreen exceeding about 400 ppi, interference due to metal line portionscan be prevented and an image with high definition can be formed.Notably, when one screen is divided by a plurality of slits, in otherwords, when the metal line portions which have the same thickness asthat of the metal mask 10 exist between the openings 25 composing onescreen, as the pitch between the openings 25 composing one screen issmaller, the metal line portions existing between the openings 25 becomea hindrance in formation of the vapor deposition pattern on the vapordeposition target, which causes formation of a vapor deposition patternwith high definition to be difficult. In other words, when the metalline portions which have the same thickness as that of the metal mask 10exist between the openings 25 composing one screen, the metal lineportions result in generation of a shadow, which causes formation of ascreen with high definition to be difficult.

Next, referring to FIGS. 8 to 11B, the openings 25 composing one screenare exemplarily described. Notably, the region obtained by closing witha broken line in the shown modes is one screen. In the shown modes,while an aggregate of a small number of openings 25 is one screen forconvenience of description, not limited to these modes, for example, theopenings 25 for millions of pixels may present in one screen, where oneopening 25 is one pixel.

In the mode shown in FIG. 8, one screen is composed of an aggregate ofopenings 25 having a plurality of openings 25 provided in the lengthwisedirection and the crosswise direction. In the mode shown in FIG. 9, onescreen is composed of an aggregate of openings 25 having a plurality ofopenings 25 provided in the crosswise direction. Moreover, in the modeshown in FIG. 10, one screen is composed of an aggregate of openings 25having a plurality of openings 25 in the lengthwise direction. Further,in FIGS. 8 to 10, the slit 15 is provided at a position overlapping theentirety of one screen.

As described above, the slit 15 may be provided at a positionoverlapping only one screen, or as shown in FIGS. 11A and B, the slit 15may be provided at a position overlapping the entirety of two or morescreens. In FIG. 11A, in the resin mask 10 shown in FIG. 8, the slit 15is provided at a position overlapping the entirety of two screenscontinuous in the crosswise direction. In FIG. 11B, the slit 15 isprovided at a position overlapping the entirety of three screenscontinuous in the lengthwise direction.

Next, exemplified by the mode shown in FIG. 8, pitches between theopenings 25 composing one screen and pitches between the screens aredescribed. The pitches between the openings 25 composing one screen andthe dimension of the opening 25 are not specially limited, but can beproperly set depending on the pattern to be produced by vapordeposition. For example, when forming the vapor deposition pattern withhigh definition of about 400 ppi, a pitch (P1) in the crosswisedirection and a pitch (P2) in the lengthwise direction between theneighboring openings 25 out of the openings 25 composing one screen areapproximately 60 μm. Moreover, the dimension of the opening isapproximately 500 μm² to 1000 μm². Moreover, one opening 25 is notlimited to correspond to one pixel, but, for example, a plurality ofpixels can be collectively one opening 25 depending on a pixelarrangement.

While a pitch (P3) in the crosswise direction and a pitch (P4) in thelengthwise direction between the screens are not specially limited, asshown in FIG. 8, when one slit 15 is provided at the positionoverlapping the entirety of one screen, metal line portions are to existbetween the screens. Accordingly, when the pitch (P4) in the lengthwisedirection and the pitch (P3) in the crosswise direction between thescreens are smaller than or substantially equal to the pitch (P2) in thelengthwise direction and the pitch (P1) in the crosswise direction ofthe openings 25 provided in one screen, the metal line portions existingbetween the screens is liable to break. Accordingly, with this pointtaken into consideration, the pitch (P3, P4) between the screens ispreferably wider than the pitch (P1, P2) between the openings 25composing one screen. An example of the pitch (P3, P4) between thescreens is approximately 1 mm to 100 mm. Notably, the pitch between thescreens means the pitch between the neighboring openings in one screenand another screen adjacent to the relevant one screen. The same holdstrue for the pitch of the openings 25 and the pitch between the screensin the vapor deposition mask of the second embodiment mentioned later.

Notably, as shown in FIGS. 11A and 11B, in the case where one slit 15 isprovided at a position overlapping the entirety of two or more screens,the metal line portions composing the inner wall surfaces of the slitsdo not exist between the plurality of screens provided in the one slit15. Accordingly, in this case, the pitch between the two or more screensprovided at the position overlapping the one slit 15 may besubstantially equal to the pitch between the openings 25 composing onescreen.

Further, on the resin mask 20, grooves may be formed to extend in thelengthwise direction or the crosswise direction of the resin mask 20.While in the case of application of heat in vapor deposition, there is apossibility that the resin mask 20 undergoes thermal expansion, andthereby, changes in dimension and position of the opening 25 arise. Byforming the grooves, they can absorb the expansion of the resin mask,and can prevent the changes in dimension and position of the opening 25caused by the resin mask 20 expanding in a predetermined direction as awhole due to accumulation of thermal expansions arising in portions inthe resin mask. Formation positions of the grooves are not limited, butwhile they may be provided between the openings 25 composing one screenand at positions overlapping the openings 25, they may be preferablyprovided between the lengthwise screens. Moreover, the grooves may beprovided on one surface of the resin mask, for example, only on thesurface on the side that is in contact with the metal mask, or may beprovided only on the surface on the side that is not in contact with themetal mask. Otherwise, they may be provided on both surfaces of theresin mask 20.

Further, the grooves extending in the lengthwise direction may be formedbetween the neighboring screens and the grooves extending in thecrosswise direction may be formed between the neighboring screens.Furthermore, the grooves can be formed in an aspect having thesecombined.

While the depth and the width of the grooves are not specially limited,since the rigidity of the resin mask 20 tends to decrease in the casewhere the depth of the grooves is too large and in the case where thewidth thereof is too large, the setting is needed with this point takeninto consideration. Moreover, the sectional shape of the grooves is notspecially limited, but only has to be arbitrarily selected as a U-shape,a V-shape or the like with the processing method or the like taken intoconsideration. The same holds true for the vapor deposition mask of thesecond embodiment.

Vapor Deposition Mask of Second Embodiment

Next, the vapor deposition mask of the second embodiment is described.As shown in FIG. 12, the vapor deposition mask of the second embodimentis characterized in that the metal mask 10 in which one slit (onethrough hole 16) is provided is stacked on one surface of the resin mask20 in which the plurality of openings 25 corresponding to a pattern tobe produced by vapor deposition are provided, and all of the pluralityof openings 25 are provided at a position overlapping one through holeprovided in the metal mask 10. Furthermore, the vapor deposition mask ofthe second embodiment is also characterized in that the inner wallsurface for composing the opening 25 of the resin mask 20 has at leastone inflection point (S1) in the thickness direction cross section. Anintersection of the first surface and the inner wall surface is thefirst intersection (Q1), the intersection of the second surface and theinner wall surface is the second intersection (Q2), and the inflectionpoint (S1) is positioned between the first intersection (Q1) and thesecond intersection (Q2). An angle (θ1), formed between the straightline (T1) connecting the first intersection (Q1) and the inflectionpoint (S1) and the first surface, is larger than the angle (θ2), formedbetween an imaginary extension of the straight line (T2) connecting theinflection point (S1) and the second intersection (Q2) and the secondsurface. At least a portion of the inner wall surface extends outwardlyfrom the first surface toward the second surface in the thicknessdirection.

The opening 25 stated in the second embodiment means an opening requiredfor forming the vapor deposition pattern on the vapor deposition target.An opening not required for forming the vapor deposition pattern on thevapor deposition target may be provided at a position not overlappingthe one through hole 16. Notably, FIG. 12 is an elevation view whichexemplarily shows the vapor deposition mask of the second embodiment andis of the vapor deposition mask as seen from the metal mask side.

In the vapor deposition mask 100 of the second embodiment, the metalmask 10 having the one through hole 16 is provided on the resin mask 20having the plurality of openings 25, and all of the plurality ofopenings 25 are provided at a position overlapping the one through hole16. In the vapor deposition mask 100 of the second embodiment that hasthis configuration, metal line portions that have the same thickness asthe thickness of the metal mask or a larger thickness than the thicknessof the metal mask do not exist between the openings 25. Hence, asdescribed for the aforementioned vapor deposition mask of the firstembodiment, the vapor deposition pattern with high definition can beformed to match the dimensions of the openings 25 provided in the resinmask 20 without interference of metal line portions suffered.

Furthermore, according to the vapor deposition mask of the secondembodiment, since there is almost no influence of a shadow even when thethickness of the metal mask 10 is made large, the thickness of the metalmask 10 can be made large until durability and handling ability can besufficiently satisfied, which enables the formation of the vapordeposition pattern with high definition and can improve durability andhandling ability.

Resin Mask

The resin mask 20 in the vapor deposition mask of the second embodimentis composed of a resin, and as shown in FIG. 12, the plurality ofopenings 25 corresponding to the pattern to be produced by vapordeposition are provided at the position overlapping one through hole 16.The openings 25 correspond to the pattern to be produced by vapordeposition, and the vapor deposition pattern corresponding to theopenings 25 is formed on the vapor deposition target by allowing thevapor deposition material released from the vapor deposition source topass through the openings 25. Notably, in the shown mode, while theopenings arranged in a plurality rows in the lengthwise direction andthe crosswise direction are exemplarily described, they may be arrangedonly in the lengthwise direction or the crosswise direction.

The vapor deposition mask 100 of the second embodiment may be used forformation of the vapor deposition pattern corresponding to one screen,or may be used for simultaneous formation of the vapor depositionpatterns corresponding to two or more screens. “One screen” in the vapordeposition mask of the second embodiment means an aggregate of openings25 corresponding to one product. When the one product is an organic ELdisplay, an aggregate of organic layers required for forming one organicEL display, in other words, an aggregate of openings 25 to be theorganic layers is “one screen”. While the vapor deposition mask of thesecond embodiment may be constituted of only “one screen” or may beprovided by arranging the “one screen” for each of a plurality ofscreens, in the case where the “one screen” is arranged for each of theplurality of screens, the openings 25 are preferably provided atpredetermined intervals on a screen-by-screen basis (refer to FIG. 11for the first embodiment). The mode of “one screen” is not speciallylimited but, for example, the one screen can also be composed ofmillions of openings 25, where one opening 25 is one pixel.

Metal Mask

The metal mask 10 in the vapor deposition mask 100 of the secondembodiment is composed of metal and has the one through hole 16.Further, in an embodiment of the present invention, the relevant onethrough hole 16 is disposed at the position overlapping all of theopenings 25, in other words, at the position where all of the openings25 arranged in the resin mask 20 can be seen, as seen head-on of themetal mask 10.

The metal portion composing the metal mask 10, that is, the portionthereof other than the one through hole 16 may be provided along theouter edge of the vapor deposition mask 100 as shown in FIG. 12, or thedimension of the metal mask 10 may be made smaller than that of theresin mask 20 to expose an outer circumferential portion of the resinmask 20 as shown in FIG. 13. Moreover, the dimension of the metal mask10 may be made larger than that of the resin mask 20, so that a part ofthe metal portion is caused to protrude outward in the crosswisedirection of the resin mask or outward in the lengthwise directionthereof. Notably, in any case, the dimension of the one through hole 16is configured to be smaller than the dimension of the resin mask 20.

While a width (W1) in the crosswise direction and a width (W2) in thelengthwise direction of the metal portion constituting the wall surfaceof the one through hole of the metal mask 10 shown in FIG. 12 are notspecially limited, as the width W1, W2 is made smaller, durability andhandling ability tend to deteriorate more. Accordingly, W1 and W2 arepreferably widths by which durability and handling ability aresufficiently satisfied. While appropriate widths can be properly setdepending on the thickness of the metal mask 10, as an example ofpreferable widths, both W1 and W2 are approximately 1 mm to 100 mm asthe metal mask of the first embodiment.

Method for Producing Vapor Deposition Mask

Next, a method for producing the vapor deposition mask of an embodimentof the present invention is exemplarily described.

The vapor deposition mask of an embodiment of the present invention canbe obtained by preparing a resin plate-equipped metal mask 50 in whichthe metal mask 10 provided with the slits 15 is stacked on one surfaceof a resin plate 30 as shown in FIG. 14A, and next, by irradiating theresin plate-equipped metal mask 50 with a laser through the slits 15from the metal mask 10 side as shown in FIG. 14B to form the openings 25corresponding to the pattern to be produced by vapor deposition in theresin plate 30 as shown in FIG. 14C.

As a method of forming the resin plate-equipped metal mask 50, the metalmask 10 provided with the slits 15 is stacked on one surface of theresin plate 30. The resin plate 30 can employ the materials describedfor the aforementioned resin mask 20.

As the forming method of the metal mask 10 in which the slits 15 areprovided, a masking member, for example, a resist material is appliedonto the surface of the metal plate, predetermined portions are exposedand developed, and thereby, a resist pattern in which positions wherethe slits 15 are finally formed remain is formed. The resist materialused as the masking member is preferably excellent in processing abilitywith desired resolution. Next, etching processing is performed by theetching method with use of the resist pattern as an etching resistantmask. After the completion of the etching, the resist pattern is cleanedand removed. By doing so, the metal mask 10 in which the slits 15 areprovided is obtained. The etching for forming the slits 15 may beperformed on one surface side of the metal plate, or may be performed onboth surface sides thereof. Moreover, in the case where the slits 15 areformed in the metal plate with use of the stacked body in which theresin plate is provided on the metal plate, the masking member isapplied onto the surface of the metal plate on the side that is not incontact with the resin plate, and the slits 15 are formed by the etchingfrom one surface side. Notably, in the case where the resin plate hasetching resistance with respect to the etching agent of the metal plate,masking of the surface of the resin plate is not needed, but in the casewhere the resin plate does not have resistance with respect to theetching agent of the metal plate, the masking member is needed to beapplied onto the surface of the resin plate. Moreover, in the above,while the resist material is mainly described as the masking member, inplace of the application of the resist material, a dry film resist maybe laminated to perform the similar patterning.

In the aforementioned method, the resin plate 30 composing the resinplate-equipped metal mask 50 may be a resin layer or a resin film formedby coating as well as a plate-shaped resin. In other words, the resinplate may be prepared beforehand. In the case of forming the resinplate-equipped metal mask 50 using the metal plate and the resin plate30, the resin layer or the resin film to be the resin mask in the finalstage can also be formed on the metal plate by a conventionally knowncoating method or the like.

As a method of forming the openings 25, the resin plate is penetratedusing a laser processing method, fine press processing, photolithographyprocessing or the like on the resin plate-equipped metal mask 50prepared above to form the openings 25 corresponding to the pattern tobe produced by vapor deposition in the resin plate. Thereby, the vapordeposition mask 100 of an embodiment of the present invention isobtained in which the metal mask 10 provided with the slits 15 isstacked on one surface of the resin mask 20 in which the openings 25corresponding to the pattern to be produced by vapor deposition areprovided. Notably, in view of capability of easily forming the openings25 with high definition, the laser processing method is preferably usedfor the formation of the openings 25. A method of forming the thicknessdirection cross-sectional shape of the inner wall surface of the openingdescribed above is not specially limited but the formation can also beproperly performed using multistage laser processing or aphotolithography processing method. For example, in the photolithographyprocessing method, by properly configuring an etching agent, an etchingrate, an etching time and the like in multistage etching processing,side etching can also be caused to arise in the thickness directioncross section of the opening to set (θ1) and (θ2) mentioned above in thethickness direction cross section of the opening within predeterminedangle ranges. Moreover, simultaneously using both the laser processingand the photolithography processing, the openings can also be formed inwhich the thicknesswise cross-sectional shape of the inner wall surfaceis the shape described above.

Moreover, the aforementioned formation of the openings 25 is preferablyperformed after the resin plate-equipped metal mask 50 is fixed to theframe. According to this method of forming the openings 25, since theopenings 25 with the aforementioned feature are provided afterward withrespect to the resin plate-equipped metal mask which is in the state ofbeing fixed to the frame, the precision in positional coordinate of theopenings 25 can be exceedingly improved. Notably, in the case of fixingthe completed vapor deposition mask 100 to the frame, the precision inpositional coordinate of the openings 25 deteriorates since the metalmask in which the opening is defined is fixed to the frame underexpanding. The frame is mentioned later.

Method for Producing Organic Semiconductor Element

Next, a method for producing an organic semiconductor element of anembodiment of the present invention is described. The method forproducing an organic semiconductor element of an embodiment of thepresent invention has a step of forming a vapor deposition pattern in avapor deposition method with use of the frame-equipped vapor depositionmask described above. There is not any limitation to the depositionmethod with use of a frame-equipped vapor deposition mask but, forexample, a PVD method (Physical Vapor Deposition) such as a reactivesputtering method, a vacuum vapor deposition method, ion plating and anelectron beam vapor deposition method, a CVD method (Chemical VaporDeposition) such as thermal CVD, plasma CVD and an optical CVD method,and the like can be cited.

The method for producing an organic semiconductor element of anembodiment having the step of forming the vapor deposition pattern inthe vapor deposition method with use of the frame-equipped vapordeposition mask has an electrode forming step of forming an electrode ona substrate, an organic layer forming step, a counter electrode formingstep, a sealing layer forming step, and the like, and in each of thearbitrary steps, the vapor deposition pattern is formed on the substratein the vapor deposition method with use of the frame-equipped vapordeposition mask. For example, in the case where the vapor depositionmethod using the frame-equipped vapor deposition mask is applied to eachof light-emitting layer forming steps for colors of R, G and B of anorganic EL device, the vapor deposition patterns of light-emittinglayers for the respective colors are formed on the substrate. Notably,the method for producing an organic semiconductor element of anembodiment of the present invention is not limited to these steps, butcan be applied to an arbitrary step of a conventionally known organicsemiconductor element with use of a vapor deposition method.

In the method for producing an organic semiconductor element of anembodiment of the present invention, in the above-mentioned step offorming the vapor deposition pattern, the vapor deposition mask fixed tothe frame is the vapor deposition mask of an embodiment of the presentinvention described above.

For the vapor deposition mask composing the frame-equipped vapordeposition mask, the vapor deposition mask 100 of an embodiment of thepresent invention described above can be used as it is, and its detaileddescription is omitted. According to the vapor deposition mask of anembodiment of the present invention described above, an organicsemiconductor element having a pattern with high definition can beformed. As the organic semiconductor element produced in the method forproducing of an embodiment of the present invention, for example,organic layers, light-emitting layers, cathode electrodes and the likeof an organic EL element can be cited. In particular, the method forproducing an organic semiconductor element of an embodiment of thepresent invention can be preferably used for producing light-emittinglayers of R, G and B of an organic EL element for which high definitionpattern precision is required.

The frame-equipped vapor deposition mask used for producing the organicsemiconductor element only has to satisfy the condition that the vapordeposition mask of an embodiment of the present invention describedabove is fixed to the frame, and is not specially limited in otherconditions. For example, as shown in FIG. 15, a frame-equipped vapordeposition mask 200 in which one vapor deposition mask 100 is fixed to aframe 60 may be used, or as shown in FIG. 16, a frame-equipped vapordeposition mask 200 in which a plurality of vapor deposition masks (fourvapor deposition masks in the shown mode) are fixed to a frame 60 toline up in the lengthwise direction or the crosswise direction (fixed toline up in the crosswise direction in the shown mode) may be used.

The frame 60 is a frame member in a substantially rectangular shape, andhas an opening for exposing the openings 25 provided in the resin mask20 of the vapor deposition mask 100 which is finally fixed, to the vapordeposition source side. The material of the frame is not speciallylimited but may be a member that can support the vapor deposition maskand, for example, a metal frame, a ceramic frame or the like can beused. Above all, the metal frame is preferable since it is easily weldedto the metal mask of the vapor deposition mask and influence such asdeformation is small. As the material of the metal frame, a metalmaterial that has large rigidity is preferable such, for example, as SUSand an invar material.

The thickness of the frame is not specially limited, but is preferablyapproximately 10 mm to 30 mm in view of rigidity and the like. The widthbetween the inner circumferential end face of the opening of the frameand the outer circumferential end face of the frame is not speciallylimited as long as it is a width with which the relevant frame can befixed to the metal mask of the vapor deposition mask, but, for example,can be exemplarily a width of approximately 10 mm to 70 mm.

Moreover, a reinforcement frame 65 or the like may exist in the openingof the frame within a range where the exposure of the openings 25 of theresin mask 20 composing the vapor deposition mask 100 is not prevented.In other words, the opening included in the frame 60 may have aconfiguration in which it is divided by a reinforcement frame or thelike. In the mode shown in FIGS. 15 and 16, while a plurality ofreinforcement frames 65 extending in the crosswise direction arearranged in the lengthwise direction, in place of these reinforcementframes 65 or along with these, a plurality of rows of reinforcementframes extending in the lengthwise direction may be arranged in thecrosswise direction. By using the frame 60 in which the reinforcementframes 65 are arranged, when the plurality of vapor deposition masks 100of various embodiments described above are fixed to the relevant frame60 to line up in the lengthwise direction and the crosswise direction,the vapor deposition masks can be fixed to the metal frame 60 even whenthe vapor deposition masks are placed at positions of overlapping withthe reinforcement frames.

A method of fixing the frame 60 to the vapor deposition mask 100 of anembodiment of the present invention is not specially limited, but thefixing can be performed by using spot welding due to laser light, anadhesive, screw fixing or the like.

Frame-Equipped Vapor Deposition Mask

Next, a frame-equipped vapor deposition mask of an embodiment of thepresent invention is described. As shown in FIGS. 15 and 16, aframe-equipped vapor deposition mask 200 of an embodiment of the presentinvention is characterized in that the vapor deposition mask 100 isfixed to a frame 60, and the vapor deposition mask 100 fixed to theframe is the above-described vapor deposition mask 100. In other words,as the vapor deposition mask fixed to the frame 60, the metal mask 10 inwhich the slit 15 overlapping the openings 25 is stacked on one surfaceof the resin mask 20 in which the openings 25 corresponding to thepattern to be produced by vapor deposition are provided, andfurthermore, the inner wall surface for composing the opening 25 of theresin mask 20 has at least one inflection point (S1) in the thicknessdirection cross section. An intersection of the first surface and theinner wall surface is the first intersection (Q1), the intersection ofthe second surface and the inner wall surface is the second intersection(Q2), and the inflection point (S1) is positioned between the firstintersection (Q1) and the second intersection (Q2). An angle (θ1),formed between the straight line (T1) connecting the first intersection(Q1) and the inflection point (S1) and the first surface, is larger thanthe angle (θ2), formed between an imaginary extension of the straightline (T2) connecting the inflection point (S1) and the secondintersection (Q2) and the second surface. At least a portion of theinner wall surface extends outwardly from the first surface toward thesecond surface in the thickness direction.

As the frame-equipped vapor deposition mask 200, the frame-equippedvapor deposition mask having been described for the aforementionedmethod for producing an organic semiconductor element can be used as itis, and the detailed description here is omitted.

According to the frame-equipped vapor deposition mask 200 of anembodiment, generation of a shadow can be sufficiently suppressed whilesecuring the strength of the openings, and a vapor deposition patternwith high definition can be produced on a vapor deposition target.

REFERENCE SIGNS LIST

200 Frame-equipped vapor deposition mask

100 Vapor deposition mask

10 Metal mask

15 Slit

16 Through hole

20 Resin mask

25 Opening

30 Resin plate

50 Resin plate-equipped metal mask

60 Frame

1. A method for manufacturing a vapor deposition mask provided with aresin mask having at least one opening hole comprising: preparing aresin plate having a first surface and an opposed second surface; andirradiating a laser beam to the resin plate to perforate the resin platewith the at least one opening hole in order to form the resin mask;wherein each inner wall surface for composing the individual openinghole includes at least one inflection point in a section along athickness direction of the resin plate, the at least one inflectionpoint being positioned between a first intersection and a secondintersection, with a proviso that the first intersection is a point atwhich the first surface and the inner wall surface are intersected andthe second intersection is another point at which the second surface andthe inner wall surface are intersected in the section along thethickness direction, an angle (θ1) being larger than another angle (θ2),with a proviso that the angle (θ1) is formed between the first surfaceand a straight line connecting the first intersection and the inflectionpoint, and the angle (θ2) is formed between the second surface and animaginary extension of another straight line connecting the inflectionpoint and the second intersection, in the section along the thicknessdirection, and at least a part of the inner wall surface is inclinedradially expansively from the first surface toward the second surface inthe section along said thickness direction.